Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers

Physical Review Letters

Volumn 102, Issue 2, 2009, Pages

  Seamons, J A ^a   Morath, C P ^a   Reno, J L ^a   Lilly, M P ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS;

BI LAYERS; COULOMB DRAGS; DRAG RESISTANCES; ELECTRON LAYERS; ELECTRON-HOLE BILAYERS; EXCITON FORMATIONS; FERMI SYSTEMS; STRONG COUPLINGS; TWO-DIMENSIONAL SYSTEMS;

DRAG;

EID: 59249089033     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.026804     Document Type: Article

References (30)

1. S.I. Shevchenko, Sov. J. Low Temp. Phys. 2, 251 (1976). SJLPDQ 0360-0335
2. Y.E. Lozovik and V.I. Yudson, Solid State Commun. SSCOA4 0038-1098 19, 391 (1976). 10.1016/0038-1098(76)91360-0
3. J.P. Eisenstein and A.H. MacDonald, Nature (London) NATUAS 0028-0836 432, 691 (2004). 10.1038/nature03081
4. M. Kellogg, J.P. Eisenstein, L.N. Pfeiffer, and K.W. West, Phys. Rev. Lett. 90, 246801 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.90.246801
5. E. Tutuc, M. Shayegan, and D.A. Huse, Phys. Rev. Lett. 93, 036802 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.036802
6. L.V. Butov, Phys. Rev. Lett. 73, 304 (1994). PRLTAO 0031-9007 10.1103/PhysRevLett.73.304
7. L.V. Butov, Nature (London) NATUAS 0028-0836 417, 47 (2002). 10.1038/417047a
8. J. Kasprzak, Nature (London) NATUAS 0028-0836 443, 409 (2006). 10.1038/nature05131
9. R. Balili, Science 316, 1007 (2007). SCIEAS 0036-8075 10.1126/science.1140990
10. U. Sivan, P.M. Solomon, and H. Shtrikman, Phys. Rev. Lett. 68, 1196 (1992). PRLTAO 0031-9007 10.1103/PhysRevLett.68.1196
11. H. Rubel, Mater. Sci. Eng. B 51, 207 (1998). MSBTEK 0921-5107 10.1016/S0921-5107(97)00261-4
12. M. Pohlt, Appl. Phys. Lett. 80, 2105 (2002). APPLAB 0003-6951 10.1063/1.1463698
13. J.A. Keogh, Appl. Phys. Lett. 87, 202104 (2005). APPLAB 0003-6951 10.1063/1.2132071
14. J.A. Seamons, D.R. Tibbetts, J.L. Reno, and M.P. Lilly, Appl. Phys. Lett. 90, 052103 (2007). APPLAB 0003-6951 10.1063/1.2437664
15. K. Das Gupta, Physica (Amsterdam) 40E, 1693 (2008). PELNFM 1386-9477 10.1016/j.physe.2007.10.111
16. A.F. Croxall, Phys. Rev. Lett. 101, 246801 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.101.246801
17. T.J. Gramila, Phys. Rev. Lett. 66, 1216 (1991). PRLTAO 0031-9007 10.1103/PhysRevLett.66.1216
18. G. Vignale and A.H. MacDonald, Phys. Rev. Lett. 76, 2786 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.76.2786
19. B.Y.K. Hu, Phys. Rev. Lett. 85, 820 (2000). PRLTAO 0031-9007 10.1103/PhysRevLett.85.820
20. B.E. Kane, L.N. Pfeiffer, K.W. West, and C.K. Harnett, Appl. Phys. Lett. 63, 2132 (1993). APPLAB 0003-6951 10.1063/1.110563
21. M.P. Lilly, Phys. Rev. Lett. 90, 056806 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.90.056806
22. A more detailed study of the role of interlayer bias in uEHBL devices can be found in C.P. Morath, J.A. Seamons, J.L. Reno, and M.P. Lilly, Phys. Rev. B PRBMDO 1098-0121 78, 115318 (2008). 10.1103/PhysRevB.78.115318
23. E.H. Hwang and S. Das Sarma, Phys. Rev. B PRBMDO 1098-0121 78, 075430 (2008). 10.1103/PhysRevB.78.075430
24. R. Pillarisetty, Phys. Rev. Lett. 89, 016805 (2002). PRLTAO 0031-9007 10.1103/PhysRevLett.89.016805
25. E.H. Hwang, S. Das Sarma, V. Braude, and A. Stern, Phys. Rev. Lett. 90, 086801 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.90.086801
26. S. Das Sarma and E.H. Hwang, Phys. Rev. B PRBMDO 1098-0121 71, 195322 (2005). 10.1103/PhysRevB.71.195322
27. A. Levchenko and A. Kamenev, Phys. Rev. Lett. 100, 026805 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.100.026805
28. A.S. Price, Science 316, 99 (2007). SCIEAS 0036-8075 10.1126/science. 1139227
29. I. Ussishkin and A. Stern, Phys. Rev. Lett. 81, 3932 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.81.3932
30. M.P. Lilly, J.P. Eisenstein, L.N. Pfeiffer, and K.W. West, Phys. Rev. Lett. 80, 1714 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.80.1714