Closely spaced and separately contacted two-dimensional electron and hole gases by in situ focused-ion implantation

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2105-2107

  Pohlt, M ^a   Lynass, M ^a   Lok, J G S ^a   Dietsche, W ^a   Klitzing, K V ^a   Eberl, K ^a   Muhle R ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYER STRUCTURE; GAAS; HOLE GAS; IN-SITU; TWO-DIMENSIONAL (2D) ELECTRON GAS;

ALUMINUM GALLIUM ARSENIDE; EPITAXIAL GROWTH; GASES; ION IMPLANTATION; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 79956006524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1463698     Document Type: Article

References (12)

1. P. B. Littlewood and X. Zhu, Phys. Scr., T 68, 56 (1996). phs PHSTBO 0031-8949
2. E. E. Mendez, L. Esaki, and L. L. Chang, Phys. Rev. Lett. 55, 2216 (1985). prl PRLTAO 0031-9007
3. T. Fukuzawa, E. E. Mendez, and J. M. Hong, Phys. Rev. Lett. 64, 3066 (1990); prl PRLTAO 0031-9007
4. J. A. Kash, M. Zachau, E. E. Mendez, J. M. Hong, and T. Fukuzawa, 66, 2247 (1991); prl PRLTAO 0031-9007
5. L. V. Butov, A. Zrenner, G. Abstreiter, G. Bhm, and G Weimann, 73, 304 (1994). prl PRLTAO 0031-9007
6. U. Sivan, P. M. Solomon, and H. Shtrikman, Phys. Rev. Lett. 68, 1196 (1992). prl PRLTAO 0031-9007
7. B. E. Kane, J. P. Eisenstein, W. Wegscheider, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. 65, 3266 (1996). apl APPLAB 0003-6951
8. Orsay Physics FIB column with integrated optical microscope.
9. S. Vijendran, P. J. A. Sazio, H. E. Beere, G. A. C. Jones, D. A. Ritchie, and C. E Norman, J. Vac. Sci. Technol. B 17, 3226 (1999). jvb JVTBD9 0734-211X
10. M. Shayegan, V. J. Goldman, C. Jiang, T. Sajoto, and M. Santos, Appl. Phys. Lett. 52, 1086 (1988); apl APPLAB 0003-6951
11. L. Pfeiffer, K. W. West, H. L. Störmer, and K. W. Baldwin, 55, 1888 (1989); apl APPLAB 0003-6951
12. B. E. Kane, L. N. Pfeiffer, K. W. West, and C. K. Harnett, 63, 2132 (1993). apl APPLAB 0003-6951