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Volumn 51, Issue 1-3, 1998, Pages 207-211
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Fabrication of independently contacted and tuneable 2D-electron-hole systems in GaAs/AlGaAs double quantum wells
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Author keywords
Buried p type back gates; Coupled 2DEG 2DHG systems; Phonon drag; Regrowth over patterned substrates; Transistors
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Indexed keywords
ANNEALING;
HETEROJUNCTIONS;
METALLIZING;
MOLECULAR BEAM EPITAXY;
PHONONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
TRANSISTORS;
ALUMINUM GALLIUM ARSENIDE;
TWO DIMENSIONAL ELECTRON GAS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0000287312
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(97)00261-4 Document Type: Article |
Times cited : (32)
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References (19)
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