Flip chip bonding of 68 × 68 MWIR LED arrays

IEEE Transactions on Electronics Packaging Manufacturing

Volumn 32, Issue 1, 2009, Pages 9-13

  Das, Naresh Chandra ^a   Taysing Lara, Mónica ^a   Olver, Kimberley Anderson ^a   Kiamilev, Fouad ^b   Prineas, J P ^c   Olesberg, J T ^c   Koerperick, E J ^c   Murray, L M ^c   Boggess, Tom F ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c Physics Department   (United States)

Author keywords

CMOS drivers; Contact resistance; Flip chip bonding; Led array

Indexed keywords

AUTOMOBILE DRIVERS; CONTACT RESISTANCE; INDIUM; PIXELS;

BONDING PRESSURES; CMOS DRIVERS; CONTACT PADS; FLIP CHIP BONDING; FLIP CHIPS; INDIUM BUMPS; LED ARRAY; LED ARRAYS; MID-WAVE INFRARED; OPTICAL CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59149106755     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEPM.2008.2005062     Document Type: Article

References (12)

1. D. B. Beasley et al., "Dynamic IR scene projector based upon the digital micro mirror device," Proc. SPIE, vol. 4366, pp. 96-104, 2001.
2. N. C. Das and M. Tobin, "Performance of mid-wave infrared (3.8 mm) light emitting diode device," Solid State Electron., vol. 50, pp. 1612-1617, 2006.
3. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, "Nitirde-based flip-chip ITO LEDs," IEEE Trans. Adv. Packag., vol. 28, no. 2, pp. 273-277, May 2005.
4. J. R. Le, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, "Low resistance and high reflectance Pt/Rh contacts to p-type GaN for gaN-based flip-chip light emitting diodes," J. Electrochem. Soc., vol. 152, pp. G92-G94, 2005.
5. J. Song, D. S. Lee, J. S. Kwak, O. H. Nam, Y. Park, and T. Y. Seong, "Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light emitting diodes," IEEE Photon. Lett., vol. 16, no. 6, pp. 1450-1452, Jun. 2004.
6. J. L. Tissot, "Advanced IR detector technology development at CEA/ LETI," Infrared Phys. Technol., vol. 43, pp. 223-228, 2002.
7. J. P. Long, S.Varadarajan, J. Matthews, and J. F. Schetzina, "UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes," Opto-Electron. Rev., vol. 10, pp. 251-260, 2002.
8. M. Li et al., "Smart structures devices and systems II," Proc. SPIE, vol. 5650, pp. 9-16, 2005.
9. R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, and M. Razeghi, "320 × 256 solar-blind focal plane arrays based on AlxGa1-xN," Appl. Phys. Lett., vol. 86, pp. 11117-1-11117-3, 2005.
10. S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai, and S. C. Shei, "Nitride based flip chip LEDs with transparent ohmic contacts and reflective mirrors," IEEE Trans. Adv. Packag., vol. 29, no. 3, pp. 403-408, Aug. 2006.
11. N. C. Das, K. Olver, F. Towner, G. Simonis, and H. Shen, "Infrared (3.8 μm) interband cascade light-emitting diode array with record high efficiency," Appl. Phys. Lett., vol. 87, pp. 41105-1-41105-3, 2005.
12. K. Chu, J. S. Lee, H. S. Cho, B. S. Rho, H. H. Park, and D. Y. Jeon, "Characteristic of Indium bump for flip chip bonding used in Polymeric waveguide Integrated optical interconnect systems," Jpn J. Appl. Phys., vol. 43, pp. 5922-5927, 2004.