SCOPUS 정보 검색 플랫폼

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 342-345

Microstructure analysis in strained-InGaN/GaN multiple quantum wells

(4) Lei, Huaping a,b Chen, Jun c Jiang, Xunya b Nouet, Gérard a

a Direction de la Recherche Fondamentale (France)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

c UNIVERSITÉ DE CAEN (France)

Author keywords

Computational simulation; InGaN; Multiple quantum wells; Strain

Indexed keywords

BOND LENGTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSTRUCTURE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; WELLS;

BARRIER THICKNESS; COMPUTATIONAL SIMULATION; CRITICAL VALUES; FORCE BALANCE MODELS; INDIUM CONCENTRATIONS; INGAN; INGAN ALLOYS; INGAN/GAN; MICROSTRUCTURE ANALYSIS; MICROSTRUCTURE PROPERTIES; MULTIPLE QUANTUM WELLS; QUANTUM WELLS; SINGULAR BEHAVIORS; STILLINGER-WEBER POTENTIALS; STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 59049108212 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.07.068 Document Type: Article

Times cited : (13)

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