Effect of negative substrate bias on HWCVD deposited nanocrystalline silicon (nc-Si) films

Solid State Sciences

Volumn 11, Issue 2, 2009, Pages 467-471

  Swain, Bibhu P ^a   Hwang, Nong M ^a  

^a Seoul National University   (South Korea)

Author keywords

FESEM; HWCVD; nc Si; Raman

Indexed keywords

CRYSTALLITE SIZE; ELECTRODEPOSITION; EMISSION SPECTROSCOPY; FIELD EMISSION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; X RAY DIFFRACTION;

CRYSTALLINE FRACTIONS; FESEM; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; HWCVD; MICROSTRUCTURAL CHARACTERISTICS; NANO-CRYSTALLINE; NC-SI; NEGATIVE BIAS; NEGATIVE SUBSTRATES; RAMAN; SI FILMS; STRUCTURAL CHARACTERIZATIONS; X- RAY DIFFRACTIONS; X-RAY REFLECTIVITIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58949102920     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2008.08.004     Document Type: Article

References (23)

1. Hatzopoulos A.T., Pappas I., Tassis D.H., Arpatzanis N., and Dimitriadisa C.A. Appl. Phys. Lett. 89 (2006) 193504
2. Yue G., Yan B., Ganguly G., Yang J., Guha S., and Teplin C.W. Appl. Phys. Lett. 88 (2006) 263507
3. Xia H., He Y.L., Wang L.C., Zhang W., Liu X.N., Zhang X.K., Feng D., and Jackson H.E. J. Appl. Phys. 78 (1995) 6705
4. Yang M., Huang D.M., Hao P.H., Zhang F.L., Hou X.Y., and Wang X. J. Appl. Phys. 75 (1994) 651
5. Li B.B., Yu D.P., and Zhang S.L. Phys. Rev. B 59 (1999) 1645
6. Bae S., Kalkan A.K., Cheng S., and Fonash S.J. J. Vac. Sci. Technol. A 16 (1998) 1912
7. Nozawa R., Takeda H., Ito M., Hori M., and Goto T. J. Appl. Phys. 81 (1997) 8035
8. Jia H., Saha J.K., Ohse N., and Shirai H. J. Phys. D, Appl. Phys. 39 (2006) 3844
9. Teii K., and Matsumoto S. J. Appl. Phys. 101 (2007) 013302
10. DeBoer S.J., Dalal V.L., Chumanov G., and Bartels R. Appl. Phys. Lett. 66 (1995) 2528
11. W.C. Choi, E.K. Kim, S.K. Min, C.Y. Park, J.H. Kim, T.Y. Seong, Appl. Phys. Lett. 70.
12. Droz C., Sauvain E.V., Bailat J., Feitknecht L., Meier J., and Shah A. Sol. Energy Mater. Sol. Cells 81 (2004) 61
13. He Y., Yin C., Cheng G., Wang L., Liu X., and Hu G.Y. J. Appl. Phys. 60 (1993) 673
14. G. Yue, B. Yan, G. Ganguly, J. Yang, S. Guha, C.W. Teplin, D.L. Williamson, Proceedings of the Fourth World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12, 2006.
15. Terasa R., Albert M., Gruger H., Haiduk A., and Kottwitz A. J. Non-Cryst. Solids 266-269 (2000) 95
16. Stern F. Phys. Rev. B 17 (1978) 5009
17. Yoshitake M., and Yoshihara K. Appl. Surf. Sci. 146 (1999) 97
18. Freed J.H. J. Chem. Phys. 83 (1985) 307
19. Joubert P., Loisel B., Chouan Y., and Haji L. J. Electrochem. Soc. 134 (1987) 2455
20. Kim J.Y., Kim D.Y., and Hwang N.M. Pure Appl. Chem. 78 (2006) 1715
21. Cheong W.S., Yoon D.Y., Kim D.Y., and Hwang N.M. J. Cryst. Growth 218 (2000) 27
22. Campbell H., and Fauchet P.M. Solid State Commun. 58 (1986) 739
23. Veprek S., Sarott F.A., and Ruckschloss M. J. Non-Cryst. Solids 137-138 (1991) 733