p-type doping of GaInNAs quaternary alloys

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 1, 2008, Pages 165-168

  Shi, Hongliang ^a   Duan, Yifeng ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

Author keywords

Alloy; Band offset; Doping; First principles; Formation energy; Transition energy

Indexed keywords

ALLOYING; BINARY ALLOYS; DOPING (ADDITIVES); GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; MAGNESIUM ALLOYS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR ALLOYS; VALENCE BANDS; ZINC ALLOYS;

BAND OFFSETS; FIRST PRINCIPLES; FORMATION ENERGIES; QUATERNARY ALLOYS; STRUCTURAL PARAMETER; TRANSITION ENERGY; TRANSITION ENERGY LEVELS; VALENCE-BAND MAXIMUMS;

GALLIUM ALLOYS;

EID: 56449090282     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.11.010     Document Type: Article

References (22)

1. Weyers M., Sato M., and Ando H. Jpn. J. Appl. Phys. 31 (1992) L853
2. Wei S.-H., and Zunger A. Phys. Rev. Lett. 76 (1996) 664
3. Shan W., Walukiewicz W., Ager J.W., Haller E.E., Geisz J.F., Friedman D.J., Olson J.M., and Kurtz S.R. Phys. Rev. Lett. 82 (1999) 1221
4. Mattila T., Wei S.-H., and Zunger A. Phys. Rev. B 60 (1999) 11245
5. Janotti A., Wei S.-H., Zhang S.B., Kurtz S., and van de Walle C.G. Phys. Rev. B 67 (2003) 161201
6. Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., and Yazawa Y. Jpn. J. Appl. Phys. 35 (1996) 1273
7. Zhang S., Niu Z., Ni H., Wu D., He Z., Sun Z., Han Q., and Wu R. Appl. Phys. Lett. 87 (2005) 161911
8. Niu Z.C., Zhang S.Y., Ni H.Q., Wu D.H., Zhao H., Peng H.L., Xu Y.Q., Li S.Y., He Z.H., Ren Z.W., Han Q., Yang X.H., Du Y., and Wu R.H. Appl. Phys. Lett. 87 (2005) 231121
9. Geisz J.F., Friedman D.J., Olson J.M., Kurtz S.R., and Keyes B.M. J. Crystal Growth 195 (1998) 401
10. Kresse G., and Furthmuller J. Phys. Rev. B 54 (1996) 11169
11. Kohn W., and Sham L.J. Phys. Rev. 140 (1965) A1133
12. Kresse G., and Joubert D. Phys. Rev. B 59 (1999) 1758
13. Zunger A., Wei S.-H., Ferreira L.G., and Bernard J.E. Phys. Rev. Lett. 65 (1990) 353
14. Wei S.-H., Ferreira L.G., Bernard J.E., and Zunger A. Phys. Rev. B 42 (1990) 9622
15. Vurgaftman I., and Meyer J.R. J. Appl. Phys. 94 (2003) 3675
16. In: Madelung O. (Ed). Semiconductors: Data Handbook. third ed. (2004), Springer, Berlin
17. Murnaghan F.D. Proc. Natl. Acad. Sci. USA 30 (1944) 244
18. Vegard L. Z. Phys. 5 (1921) 17
19. Wei S.-H. Comput. Mater. Sci. 30 (2004) 337
20. Wang H., and Chen A.-B. Phys. Rev. B 63 (2001) 125212
21. Kurtz S.R., Allerman A.A., Jones E.D., Gee J.M., and Banas J.J. Appl. Phys. Lett. 74 (1998) 729
22. Wei S.-H., and Zunger A. Appl. Phys. Lett. 72 (1998) 2011