Lateral features of Cu(In0.7Ga0.3)Se2-heterodiodes in the μm-scale by confocal luminescence and focused light beam induced currents

Thin Solid Films

Volumn 515, Issue 15 SPEC. ISS., 2007, Pages 6127-6131

  Bauer, G H ^a   Gutay L ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Activation energies; Confocal luminescence; Cu(In,Ga)Se2; Focused light beam induced currents; Potential fluctuations; Radiative recombination

Indexed keywords

ACTIVATION ENERGY; COPPER COMPOUNDS; ELECTRIC CURRENTS; LUMINESCENCE; OPTOELECTRONIC DEVICES; POLYCRYSTALLINE MATERIALS;

CONFOCAL LUMINESCENCE; FOCUSED LIGHT BEAM INDUCED CURRENTS; POTENTIAL FLUCTUATIONS; RADIATIVE RECOMBINATION;

THIN FILMS;

EID: 34247364934     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.12.133     Document Type: Article

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