Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1-xGax)Se 2 thin films versus optical band gap

Thin Solid Films

Volumn 480-481, Issue , 2005, Pages 410-414

  Bauer, G H ^a   Bruggemann R ^a   Tardon, S ^a   Vignoli, S ^b   Kniese, R ^c  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b UNIVERSITÉ LYON 1   (France)

^c ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW   (Germany)

Author keywords

Cu(In,Ga)Se2; Open circuit voltage; Photoluminescence; Recombination

Indexed keywords

ABSORPTION; COPPER COMPOUNDS; ELECTRIC EXCITATION; GALLIUM; GLASS; METALLURGY; PASSIVATION; PHOTOLUMINESCENCE; PHOTONS; THIN FILMS;

CU(IN,GA)SE2; OPEN-CIRCUIT VOLTAGES; QUASI-FERMI LEVEL SPLITTING; RECOMBINATION;

FERMI LEVEL;

EID: 18444363353     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.061     Document Type: Conference Paper

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