Sb2S3:C/CdS p-n junction by laser irradiation

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2493-2496

  Arato, A ^a   Cardenas E ^a   Shaji, S ^a   O'Brien, J J ^b,c   Liu, J ^b,c   Castillo, G Alan ^a   Das Roy, T K ^a   Krishnan, B ^a  

^a UNIVERSIDAD AUTÓNOMA DE NUEVO LEÓN   (Mexico)

^b UNIVERSITY OF MISSOURI ST LOUIS   (United States)

^c UNIVERSITY OF MISSOURI ST LOUIS   (United States)

Author keywords

Antimony sulphide; Laser annealing; Thin films

Indexed keywords

ANTIMONY; CADMIUM COMPOUNDS; DATA STORAGE EQUIPMENT; ELECTRODEPOSITION; FILM PREPARATION; IRRADIATION; LASER BEAMS; LASERS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SODIUM; SOLAR ENERGY; SOLIDS; THIN FILMS; THIOUREAS; TUNGSTEN; UREA; VAPOR DEPOSITION;

AMBIENT ATMOSPHERES; ANTIMONY SULPHIDE; CARBON DIFFUSIONS; CARBON DOPING; CARBON LAYERS; CDS; CDS FILMS; CDS THIN FILMS; CHEMICAL BATHS; COATED GLASS SUBSTRATES; LASER ANNEALING; LASER IRRADIATIONS; LASER-ASSISTED; MATERIAL PROCESSING; MORPHOLOGY AND COMPOSITIONS; MULTI-LAYER STRUCTURES; P -TYPE CONDUCTIVITIES; P-N JUNCTIONS; PHOTOVOLTAIC STRUCTURES; SODIUM CITRATES; SOLAR CELL STRUCTURES; TUNGSTEN HALOGEN LAMPS;

CARBON FILMS;

EID: 58949085478     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.025     Document Type: Article

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