Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 89-92

  Saleh, R ^a   Nickel, N H ^b   Maydell, K V ^b  

^a UNIVERSITY OF INDONESIA   (Indonesia)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Compensated polycrystalline silicon; H bonding; H density of states; Hydrogen effusion; Laser crystallization; Raman spectroscopy

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BINDING ENERGY; CRYSTALLIZATION; DEHYDROGENATION; FERMI LEVEL; HYDROGEN BONDS; POLYSILICON; RAMAN SPECTROSCOPY;

COMPENSATED POLYCRYSTALLINE SILICON; H DENSITY-OF-STATES; HYDROGEN EFFUSION; LASER CRYSTALLIZATION;

THIN FILMS;

EID: 22944454188     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.042     Document Type: Conference Paper

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