Dielectric properties of nanocrystalline Pb0.8Sr0.2TiO3 thin films at different annealing temperature

Materials Chemistry and Physics

Volumn 114, Issue 2-3, 2009, Pages 576-579

  Verma, K C ^a   Kotnala, R K ^b   Mathpal, M C ^b   Thakur, N ^a   Gautam, Prikshit ^c   Negi, N S ^a  

^a HIMACHAL PRADESH UNIVERSITY   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

AFM; Chemical synthesis; Dielectric properties; Thin films

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CERAMIC CAPACITORS; CHEMICAL PROPERTIES; DECOMPOSITION; DIELECTRIC WAVEGUIDES; FERROELECTRIC FILMS; FILM GROWTH; LEAD; LEAD ALLOYS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SOLIDS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY ANALYSIS;

AFM; ANNEALING TEMPERATURES; ATOMIC FORCES; CHEMICAL SYNTHESIS; DIELECTRIC CONSTANTS; DISPERSIONLESS; ELECTRICALLY TUNABLE; FERROELECTRIC BEHAVIORS; HIGH FREQUENCIES; HIGHER FREQUENCIES; LARGE DIELECTRIC CONSTANTS; METALLO-ORGANIC DECOMPOSITIONS; NANO-CRYSTALLINE; NANO-SIZED GRAINS; PEROVSKITE STRUCTURES; SI SUBSTRATES; TETRAGONAL PEROVSKITES; TUNABILITY; X-RAY DIFFRACTIONS;

DIELECTRIC PROPERTIES;

EID: 58849130960     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.10.012     Document Type: Article

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