PZT thin film preparation by pulsed DC magnetron sputtering

Vacuum

Volumn 83, Issue 6, 2009, Pages 921-926

  Lin, Y C ^a   Chuang, H A ^a   Shen, J H ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Deposition rate; Metallic target; Pulsed DC magnetron sputtering; PZT thin film

Indexed keywords

ARGON; DEPOSITION; DEPOSITION RATES; FILM PREPARATION; FLOW RATE; INERT GASES; LEAD; MAGNETRON SPUTTERING; MAGNETRONS; OXIDE MINERALS; OXYGEN; PEROVSKITE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING LEAD COMPOUNDS; SOLIDS; TARGETS; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION; ZIRCONIUM;

ARGON FLOW RATE; DEPOSITION RATE; DIRECT CURRENT (DC) MAGNETRON SPUTTERING; DUTY CYCLES; FILM DEPOSITION; FLOW RATIOS; LEAD ZIRCONATE TITANATE (PZTN); METALLIC TARGET; PEROVSKITE PHASE; PULSE FREQUENCIES; PULSED DC MAGNETRON SPUTTERING; PYROCHLORE PHASE; PZT THIN FILM; SI(2 1 1) SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58749112344     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.09.002     Document Type: Article

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