PAMBE growth of (1 1 2̄ 2)-oriented GaN/AlN nanostructures on m-sapphire

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 325-327

  Lahourcade, L ^a   Renard, J ^a   Kandaswamy, P K ^a   Gayral, B ^a   Chauvat, M P ^b   Ruterana, P ^b   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ DE CAEN   (France)

Author keywords

GaN; PAMBE; Quantum dots; Quantum wells; Semipolar

Indexed keywords

CORUNDUM; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH (MATERIALS); MONOLAYERS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SULFUR COMPOUNDS; VACUUM DEPOSITION; WELLS;

GAN; PAMBE; QUANTUM DOTS; QUANTUM WELLS; SEMIPOLAR;

EPITAXIAL GROWTH;

EID: 58749108819     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.067     Document Type: Article

References (7)

1. Takeuchi T., Amano A., and Akasaki I. Jpn. J. Appl. Phys. Part I 39 (2000) 413
2. Lahourcade L., Bellet-Amalric E., Abouzaïd M., Ruterana P., and Monroy E. Appl. Phys. Lett. 90 (2007) 131909
3. Lahourcade L., Renard J., Gayral B., Monroy E., Chauvat M.P., and Ruterana P. J. Appl. Phys. 103 (2008) 093514
4. Armitage R., and Hirayama H. Appl. Phys. Lett. 92 (2008) 092121
5. Adelmann C., Brault J., Mula G., Daudin B., Lymperakis L., and Neugebauer J. Phys. Rev. B 67 (2003) 165419
6. Ueda M., Kojima K., Funato M., Kawakami Y., Narukawa Y., and Mukai T. Appl. Phys. Lett. 89 (2006) 211907
7. Guillot F., et al. J. Appl. Phys. 100 (2006) 044326