Cracks in GaN/AlN multiple quantum well structures grown by MBE

Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

  Liu, X Y ^a   Aggerstam, T ^b   Holmstrom P ^c   Lourdudoss, S ^b   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; GALLIUM NITRIDE; LATTICE MISMATCH; MODULATORS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EXPANSION; ALUMINUM NITRIDE; BUFFER LAYERS; III-V SEMICONDUCTORS; NANOSCIENCE; VACUUM APPLICATIONS;

CAP LAYER THICKNESS; GAN BUFFER LAYERS; GAN CAP LAYERS; LARGE STRAINS; LATTICE CONSTANT MISMATCH; MULTIPLE QUANTUM-WELL STRUCTURES; TEMPERATURE REDUCTION; THERMAL EXPANSION COEFFICIENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 58749099363     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/4/042026     Document Type: Conference Paper

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