The influence of mechanical constraint upon the switching of a ferroelectric memory capacitor

European Journal of Mechanics, A/Solids

Volumn 28, Issue 2, 2009, Pages 195-201

  Pane, I ^a   Fleck, N A ^b   Chu, D P ^b   Huber, J E ^c  

^a BANDUNG INSTITUTE OF TECHNOLOGY   (Indonesia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Ferroelectric; Memory; Model; Stress; Thin film

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; FERROELECTRIC DEVICES; FERROELECTRIC THIN FILMS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STRESSES; SWITCHING; THIN FILM DEVICES; THIN FILMS;

FERROELECTRIC; MEMORY; MODEL; STRESS; THIN FILM;

FERROELECTRICITY;

EID: 58749093394     PISSN: 09977538     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.euromechsol.2008.09.002     Document Type: Article

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