A novel ferroelectric FET based memory cell of minimum size and non-destructive reading

Integrated Ferroelectrics

Volumn 61, Issue , 2004, Pages 71-76

  Chu, D P ^a,b  

^a Cambridge Research Laboratory of Epson   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Ferroelectric FET; Non destructive READ

Indexed keywords

COMPUTATIONAL GEOMETRY; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ELECTRIC INVERTERS; RANDOM ACCESS STORAGE; READOUT SYSTEMS;

FERROELECTRIC FET; MEMORY CELLS; NON DESTRUCTIVE READ; NONDESTRUCTIVE READ OUT (NDRO);

FERROELECTRIC MATERIALS;

EID: 33751173211     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490458829     Document Type: Article

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