Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 336-338

  Kandaswamy, P K ^a   Machhadani, H ^b   Bellet Amalric, E ^a   Nevou, L ^b   Tchernycheva, M ^b   Lahourcade, L ^a   Julien, F H ^b   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

GaN; Intersubband; MBE; Quantum well; Strain

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTOR ALLOYS; STRAIN; SUBSTRATES; TELECOMMUNICATION REPEATERS;

ABSORPTION PROPERTY; AL MOLE FRACTIONS; GAN-QUANTUM WELLS; IN-SITU CHARACTERIZATION; INTER-SUBBAND; MULTI QUANTUM WELL STRUCTURES; PLASTIC RELAXATION; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 58749084298     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.058     Document Type: Article

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