300°C operating junction temperature inverter leg investigations

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Bergogne, D ^a   Bevilacqua, P ^a   M'Rad, S ^a   Planson, D ^a   Morel, H ^a   Allard, B ^a   Brevet, O ^a  

^a Univ Claude Bernard Lyon1   (France)

Author keywords

High temperature converter; Inverter leg; JFET; SiC

Indexed keywords

CASCADE CONNECTIONS; HEAT CONDUCTION; JUNCTION GATE FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DIODES; SILICON CARBIDE; THERMAL EFFECTS;

CONDUCTION CAPABILITY; GATE VOLTAGES; HIGH TEMPERATURE CONVERTERS; SWITCHING LOSSES;

ELECTRIC INVERTERS;

EID: 33947677551     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Temperature-Dependant Characterisation of SiC Power Electronics Devices, Madhu Sudhan Chinthavali, Burak Ozpineci and Leon Tolbert, LAS 2004 Annual Meeting
2. Mitlehner, Reinhold Schemer, Karl-Otto Dohnke, Rudolf Elpelt, and Dietrich Stephani, The vertical silicon carbide JFET - a fast and low loss solid state power switching device, EPE 2001, Graz.
3. Meeting Future Application Challenges in HV Semiconductors in HV Semiconductors Jon Mark Hancock,Infineon Technologies, APEC conference, 2004
4. Silicon Carbide Devices and Applications: Gate Turn-Off Devices Hybrid Si/SiC Inverter Power Systems Applications Ahmed Blasser John Park A. William Clock Dick Herbs Eric Jacobson GE Corporate R&D, Niskayuna, NY DARPA/EPRI Megawatt Review October 17-18,2000 Alexandria, VA
5. "Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices," M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices, vol, 40, no. 3, pp. 645-655, March 1993.
6. B. Allebrand and H.-P. Nee, On the possibility to use SiC JFETs in Power Electronic circuits, in Proceedings of the 9th Conference on Power Electronics and Applications, EPE '2001, Graz, Austria, 2001.
7. B. Allebrand and H.-P. Nee, On the choice of blanking times at turn-on and turn-off for the diode-less SiC-JFET inverter bridge, in Proceedings of the 9th Conference on Power Electronics and Applications, EPE '2001, Graz, Austria, 2001.
8. website: http://www.siced,de
9. Minimizing oscillations in the Diode-Less SiC JFET Inverter Bridge BjÄom Allebrand and Hans-Peter Nee