Scaling down of organic thin film transistors: Short channel effects and channel length-dependent field effect mobility

Journal of Materials Science

Volumn 44, Issue 1, 2009, Pages 280-284

  Chen, Yi ^a   Shih, Ishiang ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTS (FLUID MECHANICS); ELECTRIC FIELDS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

AND GATES; CHANNEL DEVICES; CHANNEL LENGTHS; CONTACT RESISTANCE EFFECTS; FIELD EFFECTS; MEASUREMENT RESULTS; METAL CONTACTS; ORGANIC MATERIALS; ORGANIC THIN FILM TRANSISTORS; OXIDE THICKNESSES; SCALING DOWNS; SEMICONDUCTING LAYERS; SHORT-CHANNEL EFFECTS; SI SUBSTRATES; SMALL CHANNELS; VERTICAL ELECTRIC FIELDS;

FIELD EFFECT TRANSISTORS;

EID: 58149494379     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-008-3047-6     Document Type: Article

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