Surface Cleanness Dependence of the Interfacial Orientation of Endotaxial Ni Si2 on Si(001)

Electrochemical and Solid-State Letters

Volumn 12, Issue 3, 2009, Pages

  Wu, L H ^a   Tsai, C J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING; CRYSTAL GROWTH; ELECTRIC WIRE; NANOWIRES; NICKEL; SEMICONDUCTING SILICON COMPOUNDS; SURFACE CLEANING;

CLEANING PROCESSES; DEPOSITION TEMPERATURES; NANOWIRE STRUCTURES; NICKEL DISILICIDE; REACTIVE DEPOSITION EPITAXIES; SI(001); SUBSTRATE SURFACES;

SILICON;

EID: 58149485293     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3058995     Document Type: Article

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