Synthesis of tellurium nanowires and their transport property

Materials Chemistry and Physics

Volumn 113, Issue 2-3, 2009, Pages 523-526

  Liang, Fengxia ^a   Qian, Haisheng ^b  

^a Anhui Provincial Center for Disease Control and Prevention   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Field effect transistor; On off ratio; Tellurium nanowires; Threshold voltage

Indexed keywords

ELECTRIC WIRE; HYDROTHERMAL SYNTHESIS; NANOWIRES; NONMETALS; SODIUM; SYNTHESIS (CHEMICAL); TELLURIUM; TELLURIUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS; TRANSPORT PROPERTIES; X RAY ANALYSIS;

1D NANOSTRUCTURES; HIGH RESOLUTIONS; HYDROTHERMAL REACTIONS; INTRINSIC STRUCTURES; NANOWIRE DEVICES; ON-OFF RATIO; PREFERENTIAL GROWTH DIRECTIONS; STARTING MATERIALS; TEM IMAGES; X-RAY DIFFRACTIONS; ZONE AXIS;

FIELD EFFECT TRANSISTORS;

EID: 58149260466     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.07.101     Document Type: Article

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