Band effects on the transport characteristics of ultrascaled SNW-FETs

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 700-709

  Gnani, Elena ^a   Gnudi, Antonio ^a   Reggiani, Susanna ^a   Luisier, Mathieu ^b   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b Purdue University   (United States)

Author keywords

1 D electron gas (1DEG); Nonparabolicity effects; Quantum transport; Silicon nanowire (SNW) FET; Tight binding (TB)

Indexed keywords

BINDING ENERGY; ELECTRIC CONDUCTIVITY OF GASES; ELECTRON GAS; ELECTRONS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOWIRES; QUANTUM ELECTRONICS; TERBIUM ALLOYS; THREE DIMENSIONAL;

1-D ELECTRON GAS (1DEG); NONPARABOLICITY EFFECTS; QUANTUM TRANSPORT; SILICON NANOWIRE (SNW)-FET; TIGHT BINDING (TB);

QUANTUM CHEMISTRY;

EID: 58149242618     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2005777     Document Type: Article

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