Study of trap states in polyspirobifluorene based devices: Influence of chromophore addition

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Renaud, Ćdric ^a   Nguyen, Thien Phap ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ENERGY GAP; INDIUM COMPOUNDS; POLYMERS; TIN OXIDES;

CAPTURE CROSS SECTIONS; DEFECT FORMATION; DLTS MEASUREMENTS; ELECTRON TRAP LEVELS; EMITTING MATERIAL; INDIUM TIN OXIDE; POLYSPIROBIFLUORENE; POLYSTYRENE SULFONATE;

CHROMOPHORES;

EID: 58149218043     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3010310     Document Type: Article

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