SCOPUS 정보 검색 플랫폼

Journal of Optoelectronics and Advanced Materials

Volumn 10, Issue 12, 2008, Pages 3279-3282

ZnO thin film preparation using RF sputtering at various oxygen contents

(8) Ekem, N a Korkmaz, S a Pat, S a Balbag, M Z a Cetin N E a Ozmumcu M a Vladoiu, R a,b Musa, G a,b

a ESKISEHIR OSMANGAZI UNIVERSITY (Turkey)

b OVIDIUS UNIVERSITY (Romania)

Author keywords

Absorption spectra; Refractive index; Rf sputtering; Thin films; Uv spectra; Zno

Indexed keywords

ABSORPTION SPECTRA; ENERGY GAP; II-VI SEMICONDUCTORS; LIGHT ABSORPTION; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXIDE MINERALS; OXYGEN; REFRACTIVE INDEX; SPUTTERING; THIN FILMS; ULTRAVIOLET SPECTROSCOPY; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

BAND GAP ENERGY; NANOSTRUCTURED ZNO; OXYGEN CONTENT; RF-SPUTTERING; SEMICONDUCTING MATERIALS; TOTAL GAS PRESSURE; UV SPECTRUM; WORKING PARAMETERS;

FILM PREPARATION;

EID: 58149174355 PISSN: 14544164 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (12)

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