A new method to improve accuracy of leakage current estimation for transistors with non-rectangular gates due to sub-wavelength lithography effects

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2008, Pages 286-291

  Tsai, Kuen Yu ^a   You, Meng Fu ^a   Lu, Yi Chang ^a   Ng, Philip C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; INTEGRATED CIRCUIT LAYOUT; PARAMETER EXTRACTION; THRESHOLD VOLTAGE; TRANSISTORS;

CHANNEL WIDTHS; CIRCUIT LAYOUTS; CURRENT ESTIMATIONS; DEVICE SIMULATIONS; DRIVE CURRENTS; EDGE EFFECTS; ELECTRICAL CHARACTERISTICS; ELECTRICAL MODELS; EQUIVALENT GATE LENGTHS; EXTRACTION METHODS; EXTRACTION TECHNIQUES; IC DESIGNS; NANOMETER TRANSISTORS; NON UNIFORMS; PATTERN TRANSFERS; TCAD SIMULATIONS; THRESHOLD REGIONS; WEIGHTING FACTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 57849148539     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2008.4681587     Document Type: Conference Paper

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