A unified non-rectangular device and circuit simulation model for timing and power

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2006, Pages 423-428

  Shi, Sean X ^a   Yu, Peng ^a   Pan, David Z ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Device modeling; Physical design; VLSI CAD

Indexed keywords

(001) PARAMETER; COMPUTER-AIDED DESIGN; DEVICE CHARACTERIZATION; EQUIVALENT GATE LENGTH; EXPERIMENTAL RESULTS; INTERNATIONAL CONFERENCES; NEW MODEL; OPTICAL PROXIMITY CORRECTION (OPC); SIGNIFICANT IMPACTS; SIMULATION MODELLING; TRANSIENT SIMULATIONS; WAFER IMAGES;

CHARACTERIZATION; CIRCUIT SIMULATION; DESIGN; EXTRACTION; PARAMETER EXTRACTION; TIME MEASUREMENT;

TIMING CIRCUITS;

EID: 40349106622     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2006.320151     Document Type: Conference Paper

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