Self-consistent approach to leakage power and temperature estimation to predict thermal runaway in FinFET circuits

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 26, Issue 11, 2007, Pages 2059-2068

  Choi, Jung Hwan ^a   Bansal, Aditya ^a   Meterelliyoz, Mesut ^a   Murthy, Jayathi ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Leakage power; Silicon on insulator (SOI); Temperature; Thermal runaway

Indexed keywords

CIRCUIT BLOCKS; DESIGN TRADEOFFS; FLOOR PLANS; HEAT DISSIPATIONS; HEAT FLOWS; INTERNATIONAL TECHNOLOGIES; LEAKAGE POWER; MAXIMUM TEMPERATURE RISE; POSITIVE FEEDBACKS; PRIMARY INPUTS; ROOM TEMPERATURES; SELF-CONSISTENT APPROACHES; SELF-HEATING; SILICON-ON-INSULATOR (SOI); SUB-THRESHOLD LEAKAGES; TEMPERATURE ESTIMATIONS; THERMAL MODELS; THERMAL RESISTANCES; THERMAL RUNAWAY;

ELECTRIC NETWORK ANALYSIS; FEEDBACK; INDUSTRIAL MANAGEMENT; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MICROSENSORS; SEMICONDUCTING SILICON COMPOUNDS; TECHNOLOGICAL FORECASTING; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

FIELD EFFECT TRANSISTORS;

EID: 57549111657     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2007.906470     Document Type: Article

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