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Volumn 1, Issue , 2004, Pages 361-368
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TiCl4, as a precursor in the TiN deposition by ALD and PEALD
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Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA;
CHEMICAL VAPOR DEPOSITION;
CMOS INTEGRATED CIRCUITS;
CONCENTRATION (PROCESS);
CRYSTAL GROWTH;
DIFFUSION;
DYNAMIC RANDOM ACCESS STORAGE;
INTEGRATED CIRCUITS;
METALLIZING;
REDUCTION;
THIN FILMS;
ATOMIC LAYER DEPOSITION (ALD);
PERCURSORS;
PLASMA PULSING PARAMETERS;
TITANIUM NITRIDE;
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EID: 5744235473
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (9)
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