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Volumn 3, Issue , 2003, Pages 2201-2204

A 1 watt, 3.2 VDC, high efficiency distributed power PHEMT amplifier fabricated using LTCC technology

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC); TRANSMITTERS;

EID: 0042090557     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (11)

References (6)
  • 4
    • 0036066223 scopus 로고    scopus 로고
    • A 6 watt LDMOS broadband high efficiency distributed power amplifier fabricated using LTCC technology
    • L. Zhao, Anthony Pavio, Bob Stengel and Bruce Thompson, "A 6 Watt LDMOS Broadband High Efficiency Distributed Power Amplifier Fabricated Using LTCC Technology," 2002 IEEE IMS Symposium, pp. 897-900.
    • (2002) 2002 IEEE IMS Symposium , pp. 897-900
    • Zhao, L.1    Pavio, A.2    Stengel, B.3    Thompson, B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.