A 6 watt LDMOS broadband high efficiency distributed power amplifier fabricated using LTCC technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 897-900

  Zhao, Lei ^a   Pavio, Anthony ^a   Stengel, Bob ^a   Thompson, Bruce ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MOS DEVICES; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE;

CELLULAR BASE STATIONS; DISTRIBUTED AMPLIFIERS; PORTABLE COMMUNICATION APPLICATIONS;

POWER AMPLIFIERS;

EID: 0036066223     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A 1-20 GHz dual-gate distributed power amplifier