Theoretical consideration of step-flow and two-dimensional nucleation modes in homoepitaxial growth of 4H-SiC on (0001) vicinal surfaces under silicon-rich condition

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Mochizuki, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GROWTH (MATERIALS); NUCLEATION; SEMICONDUCTOR DOPING; SILICON; SILICON CARBIDE; SURFACE DIFFUSION; THEOREM PROVING;

CHEMICAL SPECIES; DIFFUSION LENGTHS; DIFFUSION THEORIES; FLOW GROWTHS; HOMOEPITAXIAL GROWTHS; NUCLEATION MODES; NUCLEATION THEORIES; RICH CONDITIONS; SIC SUBSTRATES; SILICON ADATOMS; STEP DYNAMICS; VICINAL SURFACES;

TWO DIMENSIONAL;

EID: 57349143344     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3043433     Document Type: Article

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