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Volumn 53, Issue 5 PART 2, 2008, Pages 2951-2954

Growth of ZnO thin films by using MOCVD with a high-speed rotating disk reactor

Author keywords

Characterization; Metalorganic vapor phase epitaxy; Semiconducting II VI materials; Zinc oxide

Indexed keywords

EID: 57349101131 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.53.2951 Document Type: Conference Paper

Times cited : (7)

References (12)

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