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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2261-2264

Dissolution characteristics of chemically amplified extreme ultraviolet resist

(4) Itani, Toshiro a Kaneyama, Koji a Kozawa, Takahiro b Tagawa, Seiichi b

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; LIGHT WATER REACTORS; ROUGHNESS MEASUREMENT; ULTRAVIOLET DEVICES;

ALKALINE DEVELOPERS; DISSOLUTION CHARACTERISTICS; DISSOLUTION RATES; EUV RESISTS; EXTREME ULTRAVIOLETS; HIGH SLOPES; HYDROXYSTYRENE; PROTECTION RATIOS; RESIST FILMS; RESOLUTION CAPABILITIES;

DISSOLUTION;

EID: 57249094103 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2987959 Document Type: Article

Times cited : (16)

References (8)

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