The effects of interfacial particles on the contact of an elastic sphere with a rigid flat surface

Journal of Tribology

Volumn 130, Issue 4, 2008, Pages

  Bozkaya, Dinçer ^a   Müftü, Sinan ^a  

^a Northeastern University   (United States)

Author keywords

Chemical mechanical polishing; Particles; Rough contact; Spherical contact

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; NANOTECHNOLOGY; POLISHING; SPHERES;

ABRASIVE PARTICLES; ASPERITY CONTACTS; BODY CONTACTS; CONTACT BEHAVIORS; CONTACT FORCES; CONTACT INTERFACES; CONTACT PRESSURES; DIRECT CONTACTS; DOWN FORCES; ELASTIC CONTACTS; ELASTIC SPHERES; FLAT SURFACES; HERTZ CONTACTS; HERTZIAN; INTERFACIAL PARTICLES; MATERIAL REMOVAL RATES; PARTICLE CONCENTRATIONS; PARTICLES; POLISHING PADS; ROUGH CONTACT; ROUGH SPHERES; SINGLE ASPERITIES; SPHERICAL CONTACT;

CHEMICAL POLISHING;

EID: 57149133411     PISSN: 07424787     EISSN: 15288897     Source Type: Journal    
DOI: 10.1115/1.2958073     Document Type: Article

References (16)

1. Oliver, M. R., 2004, Chemical Mechanical Planarization of Semiconductor Materials, Springer, New York.
2. Levert, J. A., Danyluk, S., and Tichy, J., 2000, "Mechanism for Subambient Interfacial Pressures While Polishing With Liquids," ASME J. Tribol., 122(2), pp. 450-457.
3. Qin, K., Moudgil, B., and Park, C. W., 2004, "A Chemical Mechanical Polishing Model Iincorporating Both the Chemical and Mechanical Effects," Thin Solid Films, 446(2), pp. 277-286.
4. Bastawros, A., Chandra, A., Guo, Y., and Yan, B., 2002, "Pad Effects on Material-Removal Rate in Chemical-Mechanical Planarization," J. Electron. Mater., 31(10), pp. 1022-1031.
5. Zhao, Y., and Chang, L., 2002, "A Micro-Contact and Wear Model for Chemical-Mechanical Polishing of Silicon Wafers," Wear, 252(3-4), pp. 220-226.
6. Greenwood, J. A., and Williamson, J. B. P., 1966, "Contact of Nominally Flat Surfaces," Proc. R. Soc. London, Ser. A, 295, pp. 300-319.
7. McCool, J. I., 2000, "Extending the Capability of the Greenwood Williamson Microcontact Model," ASME J. Tribol., 122(3), pp. 496-502.
8. Johnson, K. L., 1985, Contact Mechanics, Cambridge University Press, Cambridge.
9. Zhang, F., Busnaina, A. A., and Ahmadi, G., 1999, "Particle Adhesion and Removal in Chemical Mechanical Polishing and Post-CMP Cleaning," J. Electrochem. Soc., 146(7), pp. 2665-2669.
10. Luo, J., and Dornfeld, D. A., 2001, "Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling," IEEE Trans. Semicond. Manuf., 14, pp. 112-133.
11. Castillo-Mejia, D., Kelchner, J., and Beaudoin, S., 2004, "Polishing Pad Surface Morphology and Chemical Mechanical Planarization," J. Electrochem. Soc., 151(20), pp. 271-278.
12. Wu, H. C., 2004, Continuum Mechanics and Plasticity, Chapman and Hall, London/CRC, Boca Raton, FL.
13. Kim, A. T., Seok, J., Tichy, J. A., and Cale, T. S., 2003, "A Multiscale Etastohydrodynamic Contact Model for CMP," J. Electrochem. Soc., 150(9), pp. 570-576.
14. Greenwood, J. A., and Tripp, J. H., 1967, "The Elastic Contact of Rough Spheres," ASME J. Appl. Mech., 34, pp. 153-160.
15. Guo, L., and Subramanian, R. S., 2004, "Mechanical Removal in CMP of Copper Using Alumina Abrasives," J. Electrochem. Soc., 151(2), pp. 104-108.
16. Bielmann, M., Mahajan, U., and Singh, R. K., 1999, "Effect of Particle Size During Tungsten Chemical Mechanical Polishing," Electrochem. Solid-State Lett., 2(8), pp. 401-403.