Modulation of noise in submicron GaAs/AlGaAs hall devices by gating

Physical Review Letters

Volumn 93, Issue 24, 2004, Pages

  Li, Yongqing ^a   Ren, Cong ^a   Xiong, Peng ^a   Von Molnár, Stephan ^a   Ohno, Yuzo ^b   Ohno, Hideo ^b  

^a Florida State University   (United States)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HALL DEVICES; NANOPARTICLES; QUANTUM POINT CONTACTS (QPC); VOLTAGE NOISE;

CHARACTERIZATION; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ELECTRON TRAPS; HALL EFFECT; HETEROJUNCTIONS; NOISE ABATEMENT; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 42749098540     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.246602     Document Type: Article

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