High mobility electron heterostructure wafer fused onto LiNbO3

Journal of Electronic Materials

Volumn 30, Issue 7, 2001, Pages 817-820

  Friedland, K J ^a   Riedel, A ^a   Kostial, H ^a   Horicke M ^a   Hey, R ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Epitaxial lift off; Heterostructure; High mobility two dimensional electron gas; Wafer bonding

Indexed keywords

BONDING; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; TWO DIMENSIONAL;

ELECTRONIC DEFECTS; EPITAXIAL LIFT OFF; HIGH MOBILITY TWO DIMENSIONAL ELECTRON GAS; WAFER BONDING; WATER FUSION;

LITHIUM NIOBATE;

EID: 0035391902     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0063-6     Document Type: Article

References (11)