Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

IEEE Journal of Quantum Electronics

Volumn 41, Issue 12, 2005, Pages 1474-1479

  Hoffman, Darin ^a   Gin, Aaron ^a   Wei, Yajun ^a   Hood, Andrew ^a   Fuchs, Frank ^a,b   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

^b FRAUNHOFER GESELLSCHAFT   (Germany)

Author keywords

Electroluminescence; Negative luminescence; Semiconductor device radiation effects

Indexed keywords

ANTIREFLECTION COATINGS; ELECTROLUMINESCENCE; INFRARED DEVICES; LIGHT ABSORPTION; LUMINESCENCE OF SOLIDS; QUANTUM EFFICIENCY; RADIATION EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

INFRARED PHOTODIODES; NEGATIVE LUMINESCENCE; NEGATIVE LUMINESCENCE EFFICIENCY; POSITIVE LUMINESCENCE; SEMICONDUCTOR DEVICE RADIATION EFFECTS; SUPERLATTICE PHOTODIODES;

PHOTODIODES;

EID: 29244480031     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.858783     Document Type: Article

References (19)

1. V. K. Malyutenko, S. S. Bolgov, and E. I. Yablonovski, "A new type of IR luminescence," Infrared Phys., vol. 25, no. 1-2, pp. 155-199, 1985.
2. V. K. Malyutenko, "Negative luminescence in Semiconductors: A retrospective view,," Physica E, vol. 20, pp. 553-557, 2004.
3. T. Ashley, C. T. Elliott, N. T. Gordon, T. J. Phillips, and R. S. Hall, "Applications of negative luminescence," Infrared Phys. Technol., vol. 38, pp. 145-151, 1997.
4. C. T. Elliott, "Negative luminescence and its applications," in Proc. Roy. Soc. London, Ser A, vol. 359, 2001, pp. 567-579.
5. M. A. Remennyi, B. A. Matveev, N. V. Zotova, S. A. Karandashev, N. M. Stus, and G. N. Talalakin, "InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 μm," Physica E, vol. 20, pp. 548-552, 2004.
6. M. J. Pullin, H. R. Hardaway, J. D. Heber, and C. C. Phillips, "Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices," Appl. Phys. Lett., vol. 75, no. 2, pp. 3437-3439, 1999.
7. L. J. Olafsen, I. Vurgaftman, W. W. Bewley, C. L. Felix, E. H. Aifer, J. R. Meyer, J. R. Waterman, and W. Mason, "Negative luminescence from type-II InAs/GaSb superlattice photodiodes," Appl. Phys. Lett., vol. 74, no. 18, pp. 2681-2683, 1999.
8. J. R. Lindle, W. W. Bewley, I. Vurgaftman, J. R. Meyer, J. L. Johnson, M. L. Thomas, and W. E. Tennant, "Negative luminescence from mid-wave infrared HgCdTe diode arrays," Physica E, vol. 20, pp. 558-562, 2004.
9. W. W. Bewley, J. R. Lindle, I. Vurgaftman, J. R. Meyer, J. L. Johnson, M. L. Thomas, and W. E. Tennant, "Negative luminescence with 93% efficiency from midwave infrared HgCdTe diode arrays,," Appl. Phys. Lett., vol. 83, no. 16, pp. 3254-3256, 2003.
10. M. K. Haigh, G. R. Nash, N. T. Gordon, J. Edwards, A. Graham, J. Giess, J. E. Hails, and M. Houlton, "Long-wavelength HgCdTe on Silicon negative luminescent devices," Appl. Phys. Lett., vol. 86, p. 011910, 2005.
11. G. R. Nash, N. T. Gordon, T. Ashley, M. T. Emeny, and T. M. Burke, "Large-area IR negative luminescent devices," IEEE Proc. Optoelectron., vol. 150, no. 4, pp. 371-375, 2003.
12. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications," Appl. Phys. Lett., vol. 80, no. 18, pp. 3262-3264, 2002.
13. Y. Wei, A. Hood, H. Yau, A. Gin, M. Razeghi, M. Tidrow, and V. Nathan, "Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range," Appl. Phy. Lett., vol. 86, p. 233 106, 2005.
14. R. N. Hall, "Recombination processes in semiconductors," Proc. Inst. Elect. Eng., vol. 106B, no. 17, pp. 983-931, 1960.
15. H. B. Bepp and E. W. Williams, Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1972, vol. 8, ch. 4, pp. 181-320.
16. 5 compounds of GaAs type," J. Luminescence, vol. 27, no. 1, pp. 109-112, 1982.
17. A. Blacha, H. Presting, and M. Cardona, "Deformation potentials of k = 0 states of tetrahedral semiconductors," Phys. Status Solidi B, vol. B126, pp. 11-36, 1984.
18. C. H. Grein, P. M. Young, M. E. Flatte, and H. Ehrenreich, "Long wavelength InAs/InGaSb infrared detectors: optimization of carrier lifetimes," J. Appl. Phys., vol. 78, no. 18, pp. 7143-7152, 1995.
19. D. Hoffman, A. Hood, Y. Wei, A. Gin, F. Fuchs, and M. Razeghi, "[19]Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes," Appl. Phy. Lett., to be published.