Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5248-5251

  Wang, Zengmei ^a   Kutsukake, Kentaro ^a   Kodama, Hitoshi ^a   Usami, Noritaka ^a   Fujiwara, Kozo ^a   Nose, Yoshitaro ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A3. Liquid phase epitaxy; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

COOLING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; LIQUID PHASE EPITAXY; MELTING POINT; MOLECULAR BEAM EPITAXY; POWDERS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON; SOLAR ENERGY; SUBSTRATES; THERMOCHEMISTRY;

A1. CRYSTAL STRUCTURE; A3. LIQUID PHASE EPITAXY; B2. SEMICONDUCTING SILICON; B3. SOLAR CELLS; CONTROLLING PARAMETERS; COOLING RATES; ETCH PIT DENSITIES; MINORITY CARRIER DIFFUSION LENGTHS; SUBSTRATE TEMPERATURES; TEMPERATURE WINDOWS; THIN LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56949101865     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.063     Document Type: Article

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