Solution growth of silicon on multicrystalline Si substrate: Growth velocity, defect structure and electrical activity

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 694-699

  Voigt, A ^a   Steiner, B ^b   Dorsch, W ^a   Krinke, J ^a   Albrecht, M ^a   Strunk, H P ^a   Wagner, G ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; ELECTRIC CURRENT MEASUREMENT; GRAIN BOUNDARIES; LIQUID PHASE EPITAXY; METALLIZING; POLYCRYSTALLINE MATERIALS; SILICON WAFERS; SOLAR CELLS; SURFACE PROPERTIES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL ACTIVITY; ELECTRON BEAM INDUCED CURRENT MEASUREMENTS; EPILAYERS; POLYCRYSTALLINE SEED LAYER; SOLUTION GROWN THIN FILMS; TRENCH DEPTH;

CRYSTAL GROWTH;

EID: 0030231169     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00139-X     Document Type: Article

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