Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 289-296

  Kopecek, R ^a   Peter, K ^a   Hotzel J ^a   Bucher, E ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; FILM GROWTH; HALL EFFECT; LIQUID PHASE EPITAXY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING FILMS; SILICON SOLAR CELLS; SOLUTIONS; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

FLOAT ZONE (FZ) SUBSTRATES;

SEMICONDUCTING SILICON;

EID: 0033906036     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00517-5     Document Type: Article

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