Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

Optics and Laser Technology

Volumn 41, Issue 3, 2009, Pages 334-338

  El Naggar, A M ^a   El Zaiat, S Y ^b   Hassan, Saleh M ^a  

^a KING SAUD UNIVERSITY   (Saudi Arabia)

^b Ain Shams University   (Egypt)

Author keywords

GaN; Optical parameters; Thin films

Indexed keywords

ABSORPTION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LIGHT REFRACTION; NITRIDES; OPTICAL MATERIALS; OPTICAL PROPERTIES; OPTICAL VARIABLES CONTROL; ORGANIC POLYMERS; REFLECTION; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLIDS; SUBSTRATES; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

AB SORPTION COEFFICIENTS; ABSORBING FILMS; ABSORBING SUBSTRATES; EPITAXIAL GALLIUM NITRIDES; EXTINCTION COEFFICIENTS; FILM LAYERS; FITTING PROCEDURES; GAN; GAN THIN FILMS; INTERFERENCE FRINGES; NO COMPLEXES; NORMAL INCIDENCES; OPTICAL ENERGY GAPS; OPTICAL PARAMETERS; REFLECTANCE AMPLITUDES; REFLECTION SPECTRUMS; REFRACTIVE INDEX DISPERSIONS; SI SUBSTRATES;

OPTICAL FILMS;

EID: 56949101642     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlastec.2008.05.022     Document Type: Article

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