An a-Si:H/SiGe/Si punchthrough heterojunction phototransistors with an thin-Al film

Thin Solid Films

Volumn 517, Issue 5, 2009, Pages 1811-1814

  Hwang, J D ^a   Wu, J K ^b  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

a Si:H; Heterojunction phototransistors; Optical gain; Punchthrough heterojunction phototransistors; SiGe

Indexed keywords

ALUMINUM; LIGHT; LIGHT SOURCES; LIGHTING; OPTICAL GAIN; OPTICAL PROPERTIES; PHOTOTRANSISTORS; PROTECTIVE COATINGS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

A-SI:H; AL COATINGS; AL FILMS; BAND DISCONTINUITIES; COLLECTOR CURRENTS; CRYSTALLINE SILICONS; DOPING PROFILES; HETEROJUNCTION PHOTOTRANSISTORS; PHOTOGENERATED HOLES; PUNCH-THROUGH; PUNCHTHROUGH HETEROJUNCTION PHOTOTRANSISTORS; SIGE; ULTRASHALLOW JUNCTIONS;

SILICON;

EID: 56949093967     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.087     Document Type: Article

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