Amorphous silicon phototransistor as nonlinear optical device for high dynamic range imagers

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 395-399

  Nascetti, Augusto ^a,b   Caputo, Domenico ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

Active matrix; Amorphous silicon; Imager; Photodetector; Phototransistor

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRODES; IMAGE SENSORS; OPTICAL DEVICES; PHOTOCURRENTS;

PHOTOSENSOR ARRAYS;

PHOTOTRANSISTORS;

EID: 0036495863     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987108     Document Type: Article

References (8)

1. Material issues in the commercialization of amorphous silicon alloy thin-film photovoltaic technology
2. Hybrid amorphous and polycrystalline silicon devices for large area applications
3. High resolution X-ray imaging using amorphous silicon flat panel arrays
4. Image sensors in TFA technology - Status and future trends
5. Design, realization and characterization of mesa insulated a-Si bulk barrier phototransistor
6. A new analytical model for the amorphous silicon bulk barrier phototransistor
7. Current induced degradation in boron-doped hydrogenated amorphous silicon: A novel technique