Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 24, 2008, Pages 5144-5150

  Giangrandi, S ^a,b   Sajavaara, T ^c   Brijs, B ^a   Arstila, K ^a,d   Vantomme, A ^d   Vandervorst, W ^a,d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^d KU LEUVEN   (Belgium)

Author keywords

Depth profiling; Elastic recoil detection; Thin film analysis; Time of flight

Indexed keywords

CHEMICAL ELEMENTS; DAMAGE DETECTION; HEAVY IONS; NEGATIVE IONS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SILICON; TECHNOLOGY TRANSFER; THICK FILMS; THIN FILMS;

BEAM ENERGIES; DETECTION EFFICIENCIES; ELASTIC RECOIL DETECTION; ELASTIC RECOIL DETECTION ANALYSIS; ELECTROSTATIC MIRRORS; ENERGY SIGNALS; IRRADIATION DAMAGES; KEY MATERIALS; LIGHT ELEMENTS; MASS RESOLUTIONS; ROUTINE ANALYSES; SEMICONDUCTOR TECHNOLOGIES; SET-UPS; SI DETECTORS; TANDEM ACCELERATORS; TERMINAL VOLTAGES; THIN FILM ANALYSIS; TIME OF FLIGHTS; TIME-OF-FLIGHT;

DEPTH PROFILING;

EID: 56949087589     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.08.018     Document Type: Article

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