Electrical properties of nanocrystalline GaN film prepared by magnetron sputtering

Journal of Alloys and Compounds

Volumn 467, Issue 1-2, 2009, Pages 61-64

  Zhang, Z X ^a   Pan, X J ^a   Wang, T ^a   Xie, E Q ^a   Jia, L ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Gallium nitride; Space charge effects; Sputtering; Thin films

Indexed keywords

CONCENTRATION (PROCESS); CONDUCTION BANDS; CRYSTALLITES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM PREPARATION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HEAT CONDUCTION; MAGNETRONS; MICROSCOPIC EXAMINATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING GALLIUM; THICK FILMS;

CAPTURE CROSS SECTIONS; CONDUCTION BAND EDGES; CURRENT TRANSPORT MECHANISMS; DEEP LEVELS; DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL PROPERTIES; ELECTRON CONCENTRATIONS; GAN CRYSTALLITES; NANOCRYSTALLINE GAN FILMS; SPACE CHARGE EFFECTS; SPACE-CHARGE-LIMITED CURRENTS; X-RAY DIFFRACTIONS;

MAGNETRON SPUTTERING;

EID: 56849120113     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.12.025     Document Type: Article

References (26)

1. Strite S., and Morkoc H. J. Vac. Sci. Technol. B 10 (1992) 1237-1266
2. Abe K., Nonomura S., Kobayashi S., Ohkubo M., Gotoh T., Nishio M., Nitta S., Okamoto S., and Kanemitsu Y. J. Non-Cryst. Solids 227-230 (1998) 1096-1100
3. Siwiec J., Sokolowska A., Olszyna A., Dwilinski R., Kaminska M., and Konwerska-Hrabowska J. Nanostruct. Mater. 10 (1998) 625-634
4. Wang Z., Gao F., Crocombette J.-P., Zu X.T., Yang L., and Weber W.J. Phys. Rev. B 75 (2007) 153303
5. Li H.D., Zhang S.L., Yang H.B., Zou G.T., Yang Y.Y., Yue K.T., Wu X.H., and Yan Y. J. Appl. Phys. 91 (2002) 4562-4567
6. Koo A., Budde F., Ruck B.J., Trodahl H.J., Bittar A., Peston A., and Zeinert A. J. Appl. Phys. 99 (2006) 034312
7. Xie Y., Qian Y., Wang W., Zhang S., and Zhang Y. Science 272 (1996) 1926-1927
8. Frank A.C., Stowasser F., Sussek H., Pritzkow H., Miskys C.R., Ambacher O., Giersig M., and Fischer R.A. J. Am. Chem. Soc. 120 (1998) 3512
9. Knox-Davies E.C., Silva S.R.P., and Shannon J.M. Diamond Relat. Mater. 12 (2003) 1417-1421
10. Preschilla A.N., Major S., Kumar N., Samajdar I., and Srinivasa R.S. Appl. Phys. Lett. 77 (2000) 1861-1863
11. Roy R.K., Bhattacharyya S.R., Bandyopadhayay S., and Pal A.K. Thin Solid Films 500 (2006) 144-151
12. Kobayashi S., Nonomura S., Ushikoshi K., Abe K., Nishio M., Furukawa H., Gotoh T., and Nitta S. J. Cryst. Growth 189/190 (1998) 749-752
13. Kobayashi S., Nonomura S., Abe K., Ushikoshi K., and Nitta S. J. Non-Cryst. Solids 227-230 (1998) 1245-1249
14. Lang D.V. J. Appl. Phys. 45 (1974) 3023-3032
15. Gaudin O., Troupis D.K., Jackman R.B., Nebel C.E., and Gheeraert E. J. Appl. Phys. 94 (2003) 5832-5842
16. Joint Committee on Powder Diffraction Standards (JCPDS) No. 52-0791.
17. Fewster P.F. X-ray Scattering from Semiconductors. 2nd edition (2003), Imperial College Press, London
18. Hall H.P., Awaah M.A., and Das K. Phys. Stat. Sol. (a) 201 (2004) 522-528
19. Lampert M.A., and Mark P. Current Injection in Solids (1970), Academic Press, New York
20. Rizzo A., Micocci G., and Tepore A. J. Appl. Phys. 48 (1977) 3415-3424
21. Vesely J.C., Shatzkes M., and Burkhardt P.J. Phys. Rev. B 10 (1974) 582
22. Wang C.D., Yu L.S., Lau S.S., Yu E.T., Kim W., Botchkarev A.E., and Morkoc H. Appl. Phys. Lett. 72 (1998) 1211-1213
23. Fang Z.-Q., Look D.C., Visconti P., Wang D.-F., Lu C.-Z., Yun F., Morkoc H., Park S.S., and Lee K.Y. Appl. Phys. Lett. 78 (2001) 2178-2180
24. Auert F.D., Goodman S.A., Myburg G., Mohney S.E., and de Lucca J.M. Mater. Sci. Eng. B 82 (2001) 102-104
25. Kudrawiec R., Nyk M., Syperek M., Podhorodecki A., Misiewicz J., and Strek W. Appl. Phys. Lett. 88 (2006) 181916
26. Chin A.H., Ahn T.S., Li H., Vaddiraju S., Bardeen C.J., Ning C.-Z., and Sunkara M.K. Nano Lett. 7 (2007) 626-631