Solvents influencing the morphology of epitaxial solution-grown strained Ge/Si layers

Solid State Phenomena

Volumn 32-33, Issue , 1993, Pages 403-408

  Hansson, P O ^a   Bauser, E ^a   Albrecht, M ^b   Strunk, H P ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

D REGION; FREE ENERGY; INTERFACIAL ENERGY; SEMICONDUCTOR DEVICE MANUFACTURE; WETTING;

ATOMICALLY SHARP INTERFACE; COMPLETE WETTING; EQUILIBRIUM CONDITIONS; ISLAND GROWTH; NON-WETTING; STRAINED-GE; SURFACE FREE ENERGY; TWO-DIMENSIONAL GROWTH;

MORPHOLOGY;

EID: 0004910193     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.32-33.403     Document Type: Conference Paper

References (9)

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3. P. O. Hansson, E. Bauser, M. Albrecht, and H. P. Strunk, accepted for publication in Mat. Res. Soc. Proc.
4. P. O. Hansson and M. Albrecht, German Patent Application P4310612.9 (31 March 1993).
5. D. Stenkamp and W. Jäger, Electron Microscopy 1, 545 (1992).
6. J. C. Brice, The Growth of Crystals from Liquids (North-Holland, Amsterdam, 1973).
7. L. Z. Mezey and J. Giber, Jap. J. Appl. Phys. 21, 1569 (1982).
8. Handbook of Chemistry and Physics, 64th ed. (CRC Press, Inc., Boca Raton, 1984), p. F21.
9. S. Ogawa and S. Ino in Advances in Epitaxy and Endotaxy, edited by H. G. Schneider and V. Ruth (VEB, Leipzig, 1971), p. 206.