Chemical vapor deposition of chalcogenide materials for phase-change memories

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2338-2341

  Abrutis, A ^a   Plausinaitiene, V ^a   Skapas, M ^a   Wiemer, C ^b   Salicio, O ^b   Longo, M ^b   Pirovano, A ^c   Siegel, J ^d   Gawelda, W ^d   Rushworth, S ^e   Giesen, C ^f  

^a VILNIUS UNIVERSITY   (Lithuania)

^b INFM   (Italy)

^c STMICROELECTRONICS   (Italy)

^d INSTITUTO DE ÓPTICA   (Spain)

^e SAFC Hitech   (United Kingdom)

^f AIXTRON AG   (Germany)

Author keywords

Chalcogenide films; Ge Sb Te; MOCVD; Phase change memories

Indexed keywords

CARBON NANOTUBES; FILMS; GERMANIUM; PHASE CHANGE MATERIALS; SILICON; TELLURIUM COMPOUNDS; THICK FILMS; TOLUENE; VAPORS; WIRE;

CARRIER GASSES; CHALCOGENIDE FILMS; CHALCOGENIDE MATERIALS; CVD PROCESSES; DILUTED SOLUTIONS; FILM COMPOSITIONS; GE-SB-TE; GLASS SUBSTRATES; INJECTION PARAMETERS; LIQUID INJECTIONS; MOCVD; OPTICAL-; PHASE SWITCHING; PHASE-CHANGE MEMORIES; PRECURSOR DECOMPOSITIONS; REMOTE ACTIVATIONS; TE MATERIALS; THERMAL CVD;

CHEMICAL VAPOR DEPOSITION;

EID: 56649121898     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.014     Document Type: Article

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