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Volumn 49, Issue 9, 1997, Pages 27-30

The X-ray characterization of InGaN and AlGaN heterostructures for blue-light emitters

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

EID: 5644254363     PISSN: 10474838     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02914347     Document Type: Article
Times cited : (1)

References (18)
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    • H.M. Manasevit, F.M. Erdman, and W.I. Simpson, "The Use of Metalorganics in the Preparation of Semiconductor Materials, IV. The Nitrides of Aluminum and Gallium," J. Electrochem. Soc., 118 (11) (1971), pp. 1864-1868.
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    • accepted for publication
    • P.A. Grudowski et al., "Properties of InGaN Quantum-Well Heterostructures Grown on Sapphire by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., accepted for publication (1997).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.