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Volumn 60, Issue 9, 2008, Pages 28-33

Recent advances in spintronics for emerging memory devices

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; INDUSTRIAL MANAGEMENT; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 56249138995     PISSN: 10474838     EISSN: 15431851     Source Type: Journal    
DOI: 10.1007/s11837-008-0113-0     Document Type: Review
Times cited : (11)

References (33)
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    • G. Binasch et al., Phys. Rev. B, 39 (1989), pp. 4828-4829.
    • (1989) Phys. Rev. B , vol.39 , pp. 4828-4829
    • Binasch, G.1
  • 3
    • 35748981230 scopus 로고
    • Magnetic Field Sensor with Ferromagnetic Thin Layers Having Magnetically Antiparallel Polarized Components,
    • U.S. patent 4,949,039 14 August
    • P. Grünberg, "Magnetic Field Sensor with Ferromagnetic Thin Layers Having Magnetically Antiparallel Polarized Components," U.S. patent 4,949,039 (14 August 1990).
    • (1990)
    • Grünberg, P.1
  • 6
    • 56249107387 scopus 로고    scopus 로고
    • The first MRAM product was coded MR2A16A. Freescale was formerly Motorola. In 2008 Freescale spun off its MRAM division as EverSpin Technologies.
    • The first MRAM product was coded MR2A16A. Freescale was formerly Motorola. In 2008 Freescale spun off its MRAM division as EverSpin Technologies.
  • 10
    • 4444233280 scopus 로고    scopus 로고
    • D. Wang et al., IEEE Trans. Magn., 40 (2004), pp. 2269-2271.
    • (2004) IEEE Trans. Magn , vol.40 , pp. 2269-2271
    • Wang, D.1
  • 11
    • 54349124565 scopus 로고    scopus 로고
    • Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions
    • For example, refer to, 77 2008, pp, 031001, Also, see Reference 14
    • For example, refer to S. Yuasa, "Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions," J. Phys. Soc. Jpn., 77 (2008), pp. 1-13 (031001). Also, see Reference 14.
    • J. Phys. Soc. Jpn , pp. 1-13
    • Yuasa, S.1
  • 12
    • 0035133371 scopus 로고    scopus 로고
    • 054416
    • W.H. Butler et al., Phys. Rev. B, 63 (2001), pp. 1-12 (054416).
    • (2001) Phys. Rev. B , vol.63 , pp. 1-12
    • Butler, W.H.1
  • 16
    • 34249688264 scopus 로고    scopus 로고
    • 212507
    • Y.M. Lee et al., App. Phys. Lett., 90 (2007), pp. 1-3 (212507).
    • (2007) App. Phys. Lett , vol.90 , pp. 1-3
    • Lee, Y.M.1
  • 18
    • 0001317947 scopus 로고    scopus 로고
    • L. Berger, Phys. Rev. B, 54 (1996) pp. 9353-9358.
    • (1996) Phys. Rev. B , vol.54 , pp. 9353-9358
    • Berger, L.1
  • 19
    • 32944463024 scopus 로고    scopus 로고
    • IBM J. Res. & Dev
    • J.Z. Sun, IBM J. Res. & Dev., 50 (2006), pp. 81-100.
    • (2006) J.Z. Sun
  • 22
    • 56249084406 scopus 로고    scopus 로고
    • M. Nakayama et al., Spin Transfer Switching in TbCoFe/CoFeB/MgO /CoFeB/TbCoFe Magnetoresistive Tunneling Junctions with Perpendicular Magnetic Anisotropy (Presentation at the 52nd Magnetism and Magnetic Materials Conference, Tampa, Florida, 5-9 November 2007).
    • M. Nakayama et al., "Spin Transfer Switching in TbCoFe/CoFeB/MgO /CoFeB/TbCoFe Magnetoresistive Tunneling Junctions with Perpendicular Magnetic Anisotropy" (Presentation at the 52nd Magnetism and Magnetic Materials Conference, Tampa, Florida, 5-9 November 2007).
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    • Y. Huai et al., IEEE Trans. Magn., 41 (2005), pp. 2621-2626.
    • (2005) IEEE Trans. Magn , vol.41 , pp. 2621-2626
    • Huai, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.